期刊名称：TELKOMNIKA (Telecommunication Computing Electronics and Control)
印刷版ISSN：2302-9293
出版年度：2014
卷号：12
期号：4
页码：779-786
DOI：10.12928/telkomnika.v12i4.506
语种：English
出版社：Universitas Ahmad Dahlan
摘要：N on-planar structures have been identified as promising stru cture for next device generation in the nanoelectronic era . However, the continuous device dimension scaling into nano regime eventually requires more sophisticated model due to the limitation of the existing models . A model for non-planar MOSFET structure was elaborated in this paper, especially for device with pillar structure, using analytical approach. The concern of channel shape and structure were discussed as well . The result shows the shift in subthreshold characteristic in the channel with recessed channel model . The charge sharing is suspected as one of the key parameter in the shift of performance in the recessed region.
