摘要：This paper provides an investigation of the design and characterization of zinc oxide (ZnO) in infrared light emitting diode (LED) application. Zinc oxide has been proved as one of the material that consists of wide range of electrical and optical properties [1,2]. A structure of ZnO infrared LED with pn junction is designed using a simulated environment. Layer of p-type doping is located at the top center of the LED while layer of n-type doping is at the bottom. This infrared LED is developed for its capability to emit electromagnetic spectrum. In order to obtain expected outputs, some parameters of the material have to be configured precisely. As a result, a current-voltage relationship and internal quantum efficiency is obtained. Besides that, emission rate and total emission rate of the design also has been successfully investigated. Finally, the properties of ZnO infrared LED are summarized and concluded.
