摘要:In this work we report the structural characterization of the semiconductor system CuFeIIISe3 (III= Al, Ga, In), using X-ray powder diffraction data. All compounds crystallize in the tetragonal space group P 2c (Nº 112), Z = 1, with unit cell parameters a = 5.609(1) Å, c = 10.963(2) Å for CuFeAlSe3, a = 5.6165(3) Å, c = 11.075(1) Å for CuFeGaSe3, and a = 5.7762(3) Å, c = 11.5982(7) Å for CuFeInSe3.