摘要：Al/Poly (methyl methacrylate) (PMMA)/p-Si organic Schottky devices were fabricated on a p-Si semiconductor wafer by spin coating of PMMA solution. Dielectric properties of the Al/ Poly (methyl methacrylate) (PMMA)/p-Si structure have been studied using temperature-dependent admittance-voltage (C/G-V) measurements at temperatures below 300 K temperature at 1 MHz. The temperature-dependent real and imaginary parts of the dielectric constant (ɛ ʹ , ɛ“) and of the electric modulus (Mʹ, M”) as well as the ac electrical conductivity (σ AC ,) of structure were obtained using C and G data. Experimental results show that the ɛ ʹ , ɛ“, σ AC , loss tangent (tan δ), Mʹ and M” values were strong functions of the temperature and the applied bias voltage.
