摘要：Some peculiar spin valve structures with increased magneticresistance (MR), based on Co alloys, have been analyzed in this paper by simulation methods (with help of the HFSS 13.0 program) and their performances were determined for applications at digital sensors. Structures involve specular nano-oxide-layer spin valves (NOL-SV) presenting a NOL insertion inside the pinned layer. A controlled structure has been obtained, simulations indicating the parameters correlation in order to obtain the MR maxima. Values of around 5.8…16% for the MR ratio have been obtained, respectively a variation of the resistance-area product of 0.7…9 mΩ•μm2, for an individual layer thickness of around 2ߝ3.2 nm, in an applied field of about 0.4…2.7 kOe. Our results illustrate better performances of the NOL spin valves in comparison with the results previously reported in literature.
