摘要：Read heads performances have been analyzed by simulation (HFSS) in the case of the devices designed with a category of spin valve structures with nano-oxide-layer insertion, based on Co alloys. Different structures of the stack of layers in the spin valve were considered in order to increase the magnetic resistance due to contribution of the insertion layer. A parametrical evolution of the resistance-area product variation ΔRA, and of the areal storage density have been obtained using the simulation and theoretical data. Results indicate areal densities up to 780 Gbit/in2 for the system manufactured in practice, when the variation of the resistance-area product was greater than 7.4…9 mΩ•μm2, strongly dependent on the nanooxide insertion layer. These performances can be overlapped by parameters correlation, indicated by simulation. Consequently, our simulations offer solutions for improving the recording performances by controlling the spin valve structure.
