摘要：The stable slurry was prepared by ball-milling with a certain proportion of silica fume as silicon source,glucose as carbon source and metal niobium (Nb) as additives mixed with alcohol water. After the slurry was dried and pulverized, put the powder into a tubular furnace heated to 650℃ for 2h under nitrogen atmosphere to prepare precursor, the heating rate was 5℃/min. Treated the precursor under vacuum by carbothermal reduction method to prepare silicon carbide (SiC) powder. The effect of temperature and additive content on the morphology of synthesised silicon carbide and the impurity removal order on product purity were explored. After firing at 1300℃,1400℃,1500℃ for 2 h, the 3C-SiC powders are detected, and as the temperature increased, the crystallinity of the product become better. When the content of the additive is 1% of the quality of the silica fume, the particle size of the silicon carbide synthesized at the temperature of 1500℃ is even and the dispersion is better. As for the impurity removal order, removed SiO2 first, then removed C can effectively remove the impurities in the product.
