期刊名称：Walailak Journal of Science and Technology (WJST)
印刷版ISSN：2228-835X
出版年度：2014
卷号：11
期号：9
页码：777-793
DOI：10.2004/wjst.v12i1.608
语种：English
出版社：Institute of Research and Development, Walailak University.
摘要：Indium Selenide (In x Se 1-x ) thin films were synthesized in a sealed ampoule in a vacuum of 10 -2 Torr using high purity elemental indium and selenium with different x concentration (0, 10, 15 % at.wt.) using vacuum evaporation technique. The structural properties of In x Se 1-x alloys for (x = 10 and 15 % at. wt.) were examined by x-ray diffraction and exhibited a polycrystalline structure with hexagonal unit cell. The effects of the indium concentration and post deposition heat treatment on the structural and optical properties of the films were studied. The direct band gap of In x Se 1 -x thin films were estimated in the range (2.35 - 3.95) eV and the energy gap (E g opt ) increases with increasing annealing temperatures. Optical constants (included refractive index (n), extinction coefficient (k), and real (e r ) and imaginary parts (e i ) of dielectric constant) for the above films were calculated. The results were discussed in detail in relation with film recrystallization during the heating process. doi: 10.14456/WJST.2014.82
关键词：Indium Selenide, vacuum evaporation, annealing, energy gap, optical constants
