摘要：Leakage current suppression ability of threshold switching selectors is important for the high-density crossbar array of resistive random access memory (RRAM). Nevertheless, incompatibility of selector with paired RRAM element will lead to serious problems during operation. This paper investigates the ON-/OFF- resistance requirements of threshold switching selectors with simulation in 1Mb array. Results show that OFF-resistance needs to be higher than certain value while ON-resistance needs to be lower than some value to make sure successful operation. In addition, it presents the method determining the appropriate resistance range in detail. It aims at proposing guideline for fabricating and choosing adequate threshold switching selectors before integrating with RRAM element economically.
