摘要：The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K). Because of the solid-state reaction process that the gallium oxide transformed to GaN through solid-state gallium oxynitrides (GaOxNy) as inter-mediates, the Gallium nitride powders which are agglomerates of tens nanometers flake crystallites retain the rod shape and grain size of raw gallium oxide and have slight (002) plane preferred orientation. The near-edge emission of Gallium nitride at 346 nm has a blue shift of 187 meV attributed to a decrease in disorder of the material that is decided by the (002) plane preferred orientation. The preferred orientation and a blue shift have some kind of reference significance to single crystal growth.
