首页    期刊浏览 2024年11月27日 星期三
登录注册

文章基本信息

  • 标题:MOSFET Scaling Crisis and the Evolution of Nanoelectronic Devices: The Need for Paradigm Shift in Electronics Engineering Education
  • 本地全文:下载
  • 作者:Muhammad Taher Abuelma’atti ; Muhammad Taher Abuelma’atti
  • 期刊名称:Procedia - Social and Behavioral Sciences
  • 印刷版ISSN:1877-0428
  • 出版年度:2013
  • 卷号:102
  • 页码:432-437
  • DOI:10.1016/j.sbspro.2013.10.758
  • 语种:English
  • 出版社:Elsevier
  • 摘要:AbstractThis paper briefly discusses the development of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) scaling and its crisis and the evolution of the new nanoelectronic devices and their potential applications both in analog and digital circuits. The paper also discusses the need to introduce nanoelectronic devices education in the electrical engineering curricula in the Gulf Cooperation Countries (GCC).
  • 关键词:MOSFET scaling;SET;CNTEFET;FinFET;OFET;Multi-gate MOSFET
国家哲学社会科学文献中心版权所有