摘要：In this paper, a novel 120V multiple RESURF lateral double-diffused MOS (LDMOS) transistor with shallow trench isolation (STI) structure in low side is developed and successfully simulated. The proposed multiple RESURF LDMOS is able to achieve better ESOA performance while maintaining a benchmark specific on-resistance with breakdown voltage over 120 Volts. The key feature of this novel device is linear p-top rings which are located in the n-drift region. Optimization of p-top mask design and n-drift region concentration is performed in order to achieve the lowest on-resistance possible with the desired breakdown voltage.
