摘要：In VDMOS device the anti-JFET concentration has important role for determining the breakdown voltage and on-resistance of the device. Because higher N-drift doping concentration can provide the very best on-resistance of the device but also decrease breakdown voltage. It also has a proportional relationship with threshold voltage degradation. In this paper, we report the anti-JFET implantation energy influence effect electric potential distribution, the highest impact ionization shifted from the silicon surface to deeper. It will have less hot carrier impact, and we have found higher breakdown voltage. The anti-JEFT implantation is critical for on-resistance off-state breakdown voltage optimization, However the high field and high impact ionization near the gate region will cause severe hot carrier Injection problem. The general expectation of high voltage VDMOS transistor is to have higher breakdown voltage, less degradation due to hot carrier injection and better on-resistance.
