摘要：Phase change memory (PCM) is one of the most promising emerging non-volatile memory technologies. This paper simulates phase change memory devices (PCMDs) with careful attention to the scaling and its resulting impact on programming current during the switching operation, while Thomson heating within the phase change material and Peltier heating at the electrode interface are considered. The simulation results show that the device scaling has an influence on temperature distribution, volume of the molten region, heat diffusion and switching operation of PCMDs. The programming current decreases with smaller electrode size, greater thickness of phase change material and deeper isotropic scaling. The heat diffusion becomes more serious when the thickness of phase change materials decreases and the size of PCMD is isotropically scaled down. The scaling arguments also indicate that the impact of thermoelectric phenomena weakens with smaller dimensions due to the influence of programming current, heat diffusion and action area. This simulation provides useful insights to understand the switching operation of the PCMDs under the impact of thermoelectric effects. The process is instrumental for a complete understanding of device operation and hence provides valuable feedback for fine-tuning the device design so as to enhance its efficiency.
