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  • 标题:Fully Integrated K-Band Active Bandpass Filter In GPDK 90nm CMOS Technology
  • 本地全文:下载
  • 作者:Md. Jamil Uddin ; Hadaate Ullah ; Mohammad Arif Sobhan Bhuiyan
  • 期刊名称:Carptahian Journal of Electronic and Computer Engineering
  • 印刷版ISSN:1844-9689
  • 电子版ISSN:2343-8908
  • 出版年度:2018
  • 卷号:11
  • 期号:1
  • 页码:3-6
  • DOI:10.2478/cjece-2018-0001
  • 语种:English
  • 出版社:UT Press Publishing House, Technical University of ClujNapoca, Romania
  • 摘要:The bandpass filter is one of the essential blocks of every modern RF transceiver. Performance of the transceiver greatly depends on the performance of the bandpass filter. A bandpass filter designed with passive inductors suffers from some drawbacks like large chip size, low-quality factor, less tenability etc. To prevail over these constraints, an active inductor-based bandpass filter circuit has been designed in GPDK-90nm CMOS technology utilizing cadence virtuoso environment. The simulation result shows that the active inductor-based bandpass filter circuit design achieves a gain of 6.79dB, a bandwidth of 5.05 GHz and a noise figure of 3.10dB. The circuit dissipates only 3.55mW power for its operation from a single 1.5V DC supply. By avoiding bulky inductor in the design helped to attain a very small chip area of 127.704μm2.
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