摘要：AbstractThis study introduces a novel approach to derive analytical expressions of modulated semi-conductor current waveforms, which are used to develop accurate and numerically efficient average value models of the transistor current, diode current and conduction loss in VSI-drives. The approach is based on a double Fourier integral analysis of semi-conductor switching signals. Compared to previous studies, the proposed models show improved accuracy. Furthermore, the presented framework is readily generalized to evaluate the performance of practical, carrier-based PWM strategies within detailed EV power train simulations.
