摘要：AbstractCompared to conventional Si power electronic device, the advantages of SiC power electronic device are high turn-off voltage, low on-resistance, high switching frequency and high efficiency. The high performance of the device is achieved by shortening the turn-on and turn-off times. However, the SiC power modules have higherdv/dtanddi/dt,which leads to more CM (common mode) interference and DM (differential mode) interference certainly. In this paper, the operation principle of driver circuit is introduced firstly. Then, the high-disturbance driver system is verified by the SiC battery test and simulation equipment which is researched independently. In addition, an anti-interference driver circuit and driver line based on the actual engineering requirements are designed to decrease the CM interference and DM interference. Finally, the high anti-interference driver system for SiC power modules was verified by experiment.
关键词：KeywordsMOSFETSiC Power moduleAnti-interferenceDriver system
