摘要：A 4.5kV/100A FRD was designed by simulation, which had optimized carrier density distribute cell and ruggedness terminal. The cell was composed of P-body/N-sub/N+ layers, when the P-body doping concentration is lower, the carrier density distribution on the P-body/N-sub is lower; when carrier density di stribution on the P-body/N-sub side is lower than that on the N-sub/N+ side, the FRD has soft recovery but bad surge-current capability. So the P-body doping concentration needs trade-off consideration. Lifetime control technology was also used to optimize the carrier density distribution and trade-off characteristics. The terminal has high breakdown voltage, low electric field and large process window, which means more ruggedness and high reliability. The experiment results show that the design chip and competitor chip has nearly the same trade-off characteristics, the design chip has larger dynamic loss but lower static loss. The design chip has high surge current, the surge current is 13 times as much as the rate current.
