摘要：In this paper, a 4500V IGBT is investigated by device simulation. The substrate resistivity and thickness of 4500V IGBT are determined by simulation, and the appropriate implantation dose of field stop layer is determined by the simulation. The test results show that the device can not meet the application requirements of power system, so we optimize the key parameters such as saturation voltage and safe operating area. The optimized device was fabricated and the experimental results show that the breakdown voltage is 6110V, the saturation voltage is 2.6V, and the maximum controllable turn-off current is 160A, which can well meet the simulation expectation and application requirements of power system.
