摘要：The article describes the result of the use SnO2-Pd thin films as a gate for structure measured ppb range of NO2 gas by the capacitive method. The technological aspects of fabrication SnO2-Pd gate and one comparison by metrological parameters with the classical Pd gate field effect sensor are discussed. The use of SnO2-Pd material allows improvement in sensitivity of NO2 by an order of magnitude compare the classical Pd based gate field effect sensors.
