摘要：This paper develops a dynamical model for crystal diameter in the Czochralski process for production of monocrystalline silicon. The model combines simplified crystal growth dynamics with rigorous ray tracing to describe the camera image used for diameter control, and it is demonstrated that the resulting model captures the so-calledmeasurement anomalythat represents a key performance limitation for crystal diameter control.
关键词：KeywordsCzochralski processbright ring measurementright half plane zeroray tracinginterface dynamics
