摘要：Inhomogeneous Quantum Dot (IQD) semiconductor represents a newest trend in condensed matter, due to their important quantum levels and the outstanding properties. In this work, the impurity position effect on the diamagnetic susceptibility of a shallow magneto-donor, confined to move in (IQD) made out of Ga1-xAlxAs / GaAs/ Ga1-xAlxAs is reported theoretically. With the increase of the magnetic field, the diamagnetic susceptibility increases. The results using variational method reveal that diamagnetic susceptibility depends on many parameters including the impurity position, the external magnetic field and the nanostructure size. The magnetic field effect is more pronounced when the donor is placed near the extremities of the spherical layer (off-center). In addition, a maximum of diamagnetic susceptibility is observed, corresponding to a critical position value, for strong confinement regime and when the impurity is located in the spherical layer center.
