摘要：Gas sensitive iridium-gated field effect transistors based on silicon carbide were used to study the response towards formaldehyde, ammonia, carbon monoxide and nitrogen dioxide at concentrations ranging from parts per million to parts per billion diluted in dry synthetic air and under 50% of relative humidity. The sensor performance was studied using temperature cycled operation mode from 270 to 390 °C to investigate the capability of these devices to discriminate between the studied gases under different background conditions via pattern recognition algorithms.
