首页    期刊浏览 2024年09月14日 星期六
登录注册

文章基本信息

  • 标题:Competing memristors for brain-inspired computing
  • 本地全文:下载
  • 作者:Seung Ju Kim ; Sang Bum Kim ; Ho Won Jang
  • 期刊名称:iScience
  • 印刷版ISSN:2589-0042
  • 出版年度:2021
  • 卷号:24
  • 期号:1
  • 页码:1-21
  • DOI:10.1016/j.isci.2020.101889
  • 语种:English
  • 出版社:Elsevier
  • 摘要:SummaryThe expeditious development of information technology has led to the rise of artificial intelligence (AI). However, conventional computing systems are prone to volatility, high power consumption, and even delay between the processor and memory, which is referred to as the von Neumann bottleneck, in implementing AI. To address these issues, memristor-based neuromorphic computing systems inspired by the human brain have been proposed. A memristor can store numerous values by changing its resistance and emulate artificial synapses in brain-inspired computing. Here, we introduce six types of memristors classified according to their operation mechanisms: ionic migration, phase change, spin, ferroelectricity, intercalation, and ionic gating. We review how memristor-based neuromorphic computing can learn, infer, and even create, using various artificial neural networks. Finally, the challenges and perspectives in the competing memristor technology for neuromorphic computing systems are discussed.Graphical abstractDisplay OmittedMagnetism; Electromagnetics; Computing Methodology; Devices
国家哲学社会科学文献中心版权所有