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  • 标题:Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications
  • 本地全文:下载
  • 作者:Thilini K. Ekanayaka ; Guanhua Hao ; Aaron Mosey
  • 期刊名称:Maine Policy Review
  • 印刷版ISSN:2312-7481
  • 出版年度:2021
  • 卷号:7
  • 期号:3
  • 页码:37
  • DOI:10.3390/magnetochemistry7030037
  • 语种:English
  • 出版社:The University of Maine
  • 摘要:Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H<sub>2</sub>B(pz)<sub>2</sub>}<sub>2</sub>(bipy)
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