摘要：Low-symmetry two-dimensional (2D) materials have exhibited novel anisotropic properties in optics, electronics, and mechanics. Such characteristics have opened up new avenues for fundamental research on nano-electronic devices. In-plane thermal conductivity plays a pivotal role in the electronic performance of devices. This article reports a systematic study of the in-plane anisotropic thermal conductivity of PdSe<sub>2</sub> with a pentagonal, low-symmetry structure. An in-plane anisotropic ratio up to 1.42 was observed by the micro-Raman thermometry method. In the Raman scattering spectrum, we extracted a frequency shift from the mode with the most sensitivity to temperature. The anisotropic thermal conductivity was deduced by analyzing the heat diffusion equations of suspended PdSe<sub>2</sub> films. With the increase in thickness, the anisotropy ratio decreased gradually because the thermal conductivity in the <i>x</i>-direction increased faster than in the <i>y</i>-direction. The anisotropic thermal conductivity provides thermal management strategies for the next generation of nano-electronic devices based on PdSe<sub>2</sub>.
