摘要：Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si
3N
4 based metal/substrate assembly is the key to produce majority phase TiN accompanied by TiSi
2 & elemental Si as minority phases. The method itself introduces different level of disorder intrinsically by tuning the amount of the non-superconducting minority phases that are controlled by annealing temperature (
T
a
) and the film thickness. The superconducting critical temperature (
T
c
) strongly depends on
T
a
and the maximum
T
c
obtained from the demonstrated technique is about 4.8 K for the thickness range ~ 12 nm and above. Besides, the dynamics of IVCs get modulated by the appearance of intermediated resistive steps for decreased
T
a
and the steps get more prominent for reduced thickness. Further, the deviation in the temperature dependent critical current (
I
c
) from the Ginzburg–Landau theoretical limit varies strongly with the thickness. Finally, the
T
c
, intermediate resistive steps in the IVCs and the depairing current are observed to alter in a similar fashion with
T
a
and the thickness indicating the robustness of the synthesis process to fabricate disordered nitride-based superconductor.
