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  • 标题:Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films
  • 本地全文:下载
  • 作者:Ilkhom Bekpulatov ; Ilkhom Turapov ; Sevara Abraeva
  • 期刊名称:E3S Web of Conferences
  • 印刷版ISSN:2267-1242
  • 电子版ISSN:2267-1242
  • 出版年度:2021
  • 卷号:264
  • 页码:1-7
  • DOI:10.1051/e3sconf/202126405037
  • 语种:English
  • 出版社:EDP Sciences
  • 摘要:Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. The type of surface superstructures of thin silicide films has been established.
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