摘要：Ta-N (10 nm)/Zr (20 nm) film was grown on n-type (100) silicon wafer at various substrate temperatures in a rf magnetron sputtering system, followed by in situ deposition of Cu. The Cu/Ta-N/Zr/Si samples were subjected to thermal annealing up to 800 ℃ under the protection of pure nitrogen gas. In order to investigate the effect of insertion of a thin Zr layer under Ta-N film on Ta-N diffusion barrier performance in Cu metallization, Cu/Ta-N/Zr/Si contact system was characterized by X-ray diffraction (XRD), four-point probe (FPP) measurement, scanning electron microscopy (SEM), and Auger electron spectroscopy (AES) depth profile. The results reveal that the microstructure of Ta-N films deposited on Zr is amorphous at different substrate temperatures. The barrier breakdown temperature of Ta-N/Zr film is about 100°C higher than that of Ta-N. It can effectively prevent the diffusion of Cu after annealed at 800°C. The improvement of diffusion barrier performance may be due to the production of Zr-Si layer with low contact resistivity after annealed at 800°C.
