摘要：The paper studies the effect of disordering of the surface layers on the electronic and optical properties of single-crystal silicon.An analysis of the photoelectron spectra shows that with complete amorphization of the surface density, the condition of Si valence electrons of changes significantly. In particular, the positions of the main maximum of the electrons of the valence band of Si (111) shift by ~ 0.4 eV towards higher binding energies and the band gapEgincreases by 0.1-0.15 eV. The energy of a valence electron in amorphized silicon, which at low impurity concentrations, i.e. at low bombardment doses (D 15cm–2), the potentialMkkand, therefore, the shift of the maximum of the density of states vary linearly with respect to concentration. At high impurity concentrations (at doses D> 1015cm–2), corresponding to the transition to amorphous silicon, the concentration dependence ofMkkis very weak. Therefore, upon amorphization, the peak A of the density of states of the silicon valence band under consideration is shifted to the region of lower electron binding energies. The theoretical substantiation of the obtained experimental results is given.
