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  • 标题:2D Bi 2Se 3 materials for optoelectronics
  • 本地全文:下载
  • 作者:Fakun K. Wang ; Sijie J. Yang ; Tianyou Y. Zhai
  • 期刊名称:iScience
  • 印刷版ISSN:2589-0042
  • 出版年度:2021
  • 卷号:24
  • 期号:11
  • 页码:1-17
  • DOI:10.1016/j.isci.2021.103291
  • 语种:English
  • 出版社:Elsevier
  • 摘要:Summary2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3materials. The structure and inherent properties of Bi2Se3are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.Graphical abstractDisplay OmittedOptoelectronics; Nanomaterials; Materials application
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