摘要：SummaryTwo-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low power consumption. So far, the performance of the reported TMDCs-based CMOS inverters is not satisfactory. Besides, most of the inverters were made of mechanically exfoliated materials, which hinders their reproducible production and large-scale integration in practical application. In this study, we demonstrate a practical approach to fabricate CMOS inverter arrays using large-areap-MoTe2andn-MoS2, which are grown via chemical vapor deposition method. The current characteristics of the channel materials are balanced by atomic layer depositing Al2O3. Complete logic swing and clear dynamic switching behavior are observed in the inverters. Especially, ultra-low power consumption of ∼0.37 nW is achieved. Our work paves the way for the application of 2D TMDCs materials in large-scale low-power-consumption logic circuits.Graphical abstractDisplay OmittedHighlights•A practical approach to fabricate large-scale CMOS inverter arrays is demonstrated•A method to balance the current characteristics of the channel materials is developed•Complete logic swing and clear dynamic switching behavior are observed•Ultra-low power consumption of ∼0.37 nW is achievedEngineering; Nanomaterials; Devices
