摘要：SummaryNovel gas sensors that work at room temperature are attracting attention due to their low energy consumption and stability in the presence of toxic gases. However, the development of sensing characteristics at room temperature is still a primary challenge. Diverse reaction pathways and low adsorption energy for gas molecules are required to fabricate a gas sensor that works at room temperature with high sensitivity, selectivity, and efficiency. Therefore, we enhanced the gas sensing performance at room temperature by constructing hybridized nanostructure of 1D–2D hybrid of SnSe2layers and SnO2nanowire networks and by controlling the back-gate bias (Vg = 1.5 V). The response time was dramatically reduced by lowering the energy barrier for the adsorption on the reactive sites, which are controlled by the back gate. Consequently, we believe that this research could contribute to improving the performance of gas sensors that work at room temperature.Graphical abstractDisplay OmittedHighlights•1D SnO2Nanowire–2D SnSe2Heterostructure-based Gas Sensor•Selectivity for NO2gas at room temperature•Improve the sensing characteristics through a large effective reaction area•Controlling the gate bias enhances carrier movement and improves sensing performanceSensor; Nanotechnology; Biotechnology
