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  • 标题:Band structure tuning of g-C3N4 via sulfur doping for broadband near-infrared ultrafast photonic applications
  • 本地全文:下载
  • 作者:Dong Li ; Dong Li ; Chu Hongwei
  • 期刊名称:Nanophotonics
  • 印刷版ISSN:2192-8606
  • 电子版ISSN:2192-8614
  • 出版年度:2021
  • 卷号:11
  • 期号:1
  • 页码:139-151
  • DOI:10.1515/nanoph-2021-0549
  • 语种:English
  • 出版社:Walter de Gruyter GmbH
  • 摘要:Graphitic carbon nitride (g-C3N4) featuring a stable heptazine ring structure and high polymerization degree, was indexed as a high thermochemical stability material, attracting rising research enthusiasm for diverse applications. However, the poor near-infrared (NIR) optical absorption and resulting limited NIR applications were pronounced for g-C3N4 due to its large bandgap of 2.7 eV. In the present work, sulfur-doping was manifested by first-principles calculations to introduce impurity level and result in anisotropic spin splitting in g-C3N4 for enhancing broadband nonlinear optical characteristics in NIR regime. The modified sulfur-doped g-C3N4 (S-C3N4) exhibited the maximum effective nonlinear absorption coefficient to be −0.82 cm/GW. Pulse duration within hundred nanoseconds was realized with high modulation stability employing S-C3N4 as saturable absorber in Q-switching operations. Moreover, broadband ultrafast photonics properties were successfully demonstrated in constructed ytterbium-doped and erbium-doped fiber lasers, generating highly stable dissipative soliton and traditional soliton mode-locking pulses. The presented S-C3N4 nanomaterial with remarkable nonlinear optical performances might explicitly boost the development and application of g-C3N4 materials in advanced optoelectronic and ultrafast photonic devices.
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