摘要：The paper presents results of electrical breakdown time delay mean value t¯d as a function of relaxation time τ (memory curve) for krypton and xenon-filled diodes at 270 Pa pressure. Memory curves were obtained for the cases without radiation as well as in the presence of gamma and UV radiation. It was shown that significant influence of UV radiation to t¯d can be observed for τ ≥ 100 ms, as well as gamma radiation for τ ≥ 103 ms. Laue's distribution was also investigated for electrical breakdown time delay data sets td, obtained for τ ≥ 150 ms, without radiation as well as in the presence of gamma and UV radiation. It was shown that for all these data sets Laue's distribution stands, except for the case when krypton-filled tube was subjected to UV radiation. On the basis of the obtained results, the throughout analysis was performed with the aim to investigate possible application of these diodes as sensors of gamma and UV radiation.
