摘要：In this investigation, the coupled between electrons and holes is studied during a theoretical mathematical-physical model of semiconductor medium. The elasto-thermodiffusion (ETD) theory during photothermal transport processes is taken into consideration. The governing equations are examined under the effect of external magnetic field. This model is used to improve the outside weak electric of semiconductor medium. The one-dimensional (1D) deformation is constructed when thermoelastic (TD) and electronic (ED) deformation with the holes processes are occurred. The dimensionalized field quantities are obtained algebraically with some mathematical methods for the principle physical fields (hole charge field carrier, elastic, thermal and electrons charge carrier density (plasma) waves). Laplace transform and some initial conditions are used algebraically to solve the system of equations. The conditions are taken at the boundary for the main physical fields subjected to ramp heating type in Laplace domain. Laplace invers transform with approximate technique is used numerically to get the closed form in time domain for the principle fields. Some comparisons are carried out graphically for the waves propagation of the main physical fields under the effect of many different parameters (thermal relaxation times, magnetic field impact and the input parameters of the medium) and discussed.
关键词：Electrons and holes Ramp heating type Plasma Magnetic field Photothermal excitation Semiconductors
