摘要：SummaryDoping is an important technique for semiconductor materials and devices, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we demonstrate a facile way to dope two-dimensional Sn-based perovskite (PEA)2SnI4by incorporating SnI4in the precursor solutions. It is observed that Sn4+produces p-doping effect on the perovskite, which increases the electrical conductivity by 105times. The dopant SnI4is also found to improve the film morphology of (PEA)2SnI4, leading to reduced trap states. This doping technique allows us to improve the room temperature mobility of (PEA)2SnI4field-effect transistors from 0.25 to 0.68 cm2V−1s−1thanks to reduced trapping effects in the doped devices. Moreover, the doping technique enables the characterization and improvement of the thermoelectric performance of (PEA)2SnI4films, which show a high power factor of 3.92 μW m−1K−2at doping ratio of 5 mol %.Graphical abstractDisplay OmittedHighlights•The p-doping effect of Sn4+on (PEA)2SnI4is demonstrated and confirmed.•Proper Sn4+doping can improve the mobilities of (PEA)2SnI4FETs.•Thermoelectric performance of (PEA)2SnI4is characterized and enhanced by Sn4+doping.Inorganic materials; Materials science; Materials chemistry; Devices
