期刊名称：Journal of Pure and Applied Science and Technology
印刷版ISSN：2231-4202
电子版ISSN：2249-9970
出版年度：2017
卷号：2017
页码：18-28
语种：English
出版社：Natthan Lal Sevarth Samiti
摘要：In the present paper we studied experimentally the channel thermal noise in MOSFETs of short and long channel length at various drain to source voltage (Vds) and various gate to source voltage (Vgs). We also plot graph between channel thermal noise (SID) Vs (Vds) & channel thermal noise (SID) Vs gate to source voltage (Vgs). The result so obtained has good agreement with the theoretical data available in the literature. This proves the validity of our MOSFETs model.
