标题：Influence/Effect of Deep-Level Defect of Absorber Layer and n/i Interface on the Performance of Antimony Triselenide Solar Cells by Numerical Simulation
摘要：The antimony sulphide (AnS) solar cell is a relatively new photovoltaic technology. Because of its attractive material, optical, and electrical qualities, Sb2Se3 is an excellent absorption layer in solar cells, with a conversion efficiency of less than 8%. The purpose of this research is to determine the best parameter for increasing solar cell efficiency. This research focused on the influence of absorber layer defect density and the n/i interface on the performance of antimony trisulfide solar cells. The researchers designed the absorber thickness values with the help of the SCAPS-1D (Solar Cell Capacitance Simulator-1D) simulation programme. For this purpose, they designed the ZnS/Sb2Se3/PEDOT: PSS planar p-i-n structure, and then simulated its performance. This result confirms a Power Conversion Efficiency (PCE) of ≥25% at an absorber layer thickness of >300 nm and a defect density of 1014 cm−3, which were within the acceptable range. In this experiment, the researchers hypothesised that the antimony triselenide conduction band possessed a typical energy of ≈0.1 eV and an energetic defect level of ≈0.6 eV. At the n/i interface, every condition generated a similar result. However, the researchers noted a few limitations regarding the relationship between the defect mechanism and the device performance.
