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  • 标题:Patent research front mining of GaN semiconductor based on the LDA model
  • 本地全文:下载
  • 作者:Ruijiao Ma ; Yuntao Zhang ; Jiakuan Chen
  • 期刊名称:SHS Web of Conferences
  • 印刷版ISSN:2416-5182
  • 电子版ISSN:2261-2424
  • 出版年度:2022
  • 卷号:140
  • 页码:1-4
  • DOI:10.1051/shsconf/202214001019
  • 语种:English
  • 出版社:EDP Sciences
  • 摘要:This paper aims to identify and analyze research front topics of GaN semiconductor. The research method was to mine and identify topics based on GaN patent data by using the LDA model and topic intensity index. Finally, through experiments, we obtained and analyzed 4 research front topics. The results provided informatics support for revealing the research status and trend of GaN semiconductor.
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