期刊名称：IAENG International Journal of Computer Science
印刷版ISSN：1819-656X
电子版ISSN：1819-9224
出版年度：2020
卷号：47
期号：2
语种：English
出版社：IAENG - International Association of Engineers
摘要：Locality of reference is preferable every time while writing to cache blocks. The write process may repeat only on a few adjacent cache blocks. As a result, it creates a stress on those blocks. If resistive memory is chosen to be the fundamental technology for the write purpose, the write sensitivity on those blocks increases more. It causes a loss to the durability of the memory. It can be damaged earlier in comparison to NAND/NOR Flash memories (105 to 106 program/erase cycles). This non-uniformity in writes as well as malicious attacks in CMPs cache can cause sudden breakdown of those systems. The wear out of memory blocks at their primary stages can be avoided by wear leveling through distribution of writes to different blocks.
