摘要：AbstractObjectivesSensor biology and sensor devices have been advancing since its inceptions. In this work, we report fabrication of carbon nanotubes filed-effect transistor (CNT-FET) sensor and its characterization. CNT intensively has been used in the construction of sensing layers due to their exceptional features, large surface area, stability, high mechanical strength, adaptability, and functional behavior.MethodsCarbon nanotubes (CNTs) as semiconductor were fabricated as an active nanomaterial between the source-drain electrodes. The fabrication of CNT-FETs performed by following conventional photolithography method and lift-off techniques.ResultsThe structural morphology of deposited CNT was confirmed by the scanning electron micrograph (SEM) imaging. The transfer curves between drain-source were considered as a function of the drain-source voltage (VDS) and gate-source voltage (VGS) from individual CNT-FET fabricated wafer. The characterized Ion/Ioffratio was calculated for every CNT-FET device. The semiconductor properties of the fabricated CNT-FET device characterized by the source-drain current (IDS) versus gate voltage (VGS).ConclusionsCNT-FET based device have advantages of low cost fabrication, quick response, increased sensitivity, small size, and high flexibility. CNT-FETs have been used comprehensively in the biosensing of chemicals, proteins, nucleic acids, bacteria, and virus etc. This device could be used for SARS-CoV-2 and related variant detection in current scenario.
关键词：KeywordsCarbon nanotubesField-effect transistorScanning electron micrographPBASE
