摘要：In this paper, the GAA-SiNT-FET, a nanotechnology that consumes minimal area while giving excellent performance is employed to build 6T and 8T SRAM cells with low power and good performance. Static Noise Margin is used to evaluate the behavior of 6T and 8T SRAM cells (SNM). In the comparison of 6T and 8T SRAM cell operations, 8T SRAM demonstrates better SNM characteristics with reduced leakage current, making them more acceptable.
