出版社：The Society of Photographic Science and Technolgy of Japan
摘要：It is demonstrated that a highly doped semiconductor electrode, or a semiconductor tunnel electrode, enables us to measure the distribution of acceptor state density of excited dye molecules at electrode/dye solution interfaces. Analysis of the sensitized photocurrent-potential curves at the n-SnO2 tunnel electrode/Rhodamine B aqueous solution interface indicates that the acceptor state density of excited Rhodamine B molecule possesses a Gaussian distribution peaking at 0.37V vs. VAg/AgCl·
