出版社：The Institute of Image Information and Television Engineers
摘要：We have developed a 2.0-μm-pixel-pitch 2M-MOS image sensor. The key technologies that were used to achieve the high sensitivity of the MOS image sensor are a new pixel circuit configuration, a fine design rule of 0.15 μm, and a thin amorphous silicon film color filter. In the new pixel circuit configuration, a unit pixel consists of a photodiode, a transfer transistor, and an amplifier circuit with two transistors that are shared by four pixels. The unit pixel thus has 1.5 transistors. The fine design rule of 0.15 μm enables a 40% reduction in wiring area. As a result, an aperture ratio of 30% is achieved. A new color filter made of amorphous silicon is 1/10 the thickness of a conventional organic pigment color filter and gives rise to highly efficient light collection. The high sensitivity of the image sensor is achieved using these three technologies.
