出版社：The Institute of Image Information and Television Engineers
摘要：A new CMOS image sensor using a hole based detector has been developed. The measurement shows that crosstalk is reduced to one-third and dark current is reduced to a thirtieth that of a standard nMOS device. Red-into-green pixel crosstalk is 7% at 650 nm for a 4.3-μm pixel and dark current as low as 6 pA/cm2 at 60°C. Charge capacities of 60, 11 and 4kh+ have been measured for 4.3-, 1.75- and 1.4-μm pixels, respectively.
