We have proposed the CMOS color image sensor with overlaid organic photoelectric conversion layers in order to overcome the problems in sensitivity, moire and color shading, which current CCD and CMOS image sensors have been facing with. The above-stated organic photoelectric conversion layers and conventional organic photovoltaic ones are similar in structure to each other, and different in function between them. It is especially required that the dark current of the sensor with the organic photoelectric conversion layers should be as small as that with a silicon photodiode. In this study, we have examined the effect of blocking layers upon the dark current of the proposed sensor and the quality of the pictures, which was taken by it and will be shown during this lecture.