期刊名称：International Journal of Research in Computer Engineering & Electronics
印刷版ISSN：2319-376x
出版年度：2015
卷号：4
期号：2
语种：English
出版社：BHOPAL INSTITUTE OF PROFESSIONAL STUDIES
摘要：Polycrystalline cadmium telluride (CdTe) is regarded as one of the leading photovoltaic (PV) materials for its high efficiency, low-cost and stable PV cells. In this work, the cell performances (Jsc, FF, Voc, efficiency and temperature stability) of ultra-thin CdTe solar cell was investigated by numerical analysis utilizing AMPS (Analysis of Microelectronic and Photonic Structures) simulator. In the proposed cell, the CdTe layer was reduced and found that 1μm CdTe layer is enough for acceptable range of cell conversion efficiency. The feasibility of this ultra-thin CdTe absorber layer was examined, together with 0.1μm As2Te3 back surface field (BSF) layer to reduce the barrier height in the valence band and to minimize the recombination losses at the back contact of the CdTe PV cell. It was found that the proposed ultra-thin cell have conversion efficiency of 18.68% (Jsc = 21.47 mA/cm2, FF = 0.85, Voc = 1.02 V) without BSF and with 100nm As2Te3 BSF conversion efficiency increased to 22.39% (Jsc = 24.24 mA/cm2, FF = 0.872, Voc = 1.06 V) with only 0.8μm of CdTe layer. Moreover, it was found that the normalized efficiency of the proposed cell linearly decreased with the increasing operating temperature at the gradient of -0.15%/°C, which indicated better stability of the proposed CdTe PV cell. Index Terms— AMPS, As2Te3 BSF, CdTe cell, Photovoltaic.
