摘要：We adopted a novel method to tune the terrace width of Si(111) substrate by varying the direction of heating current. It was observed that the uniaxial magnetic anisotropy (UMA) of Fe films grown on the Si(111) substrate enhanced with decreasing the terrace width and superimposed on the weak six-fold magnetocrystalline anisotropy. Furthermore, on the basis of the scanning tunneling microscopy (STM) images, self-correlation function calculations confirmed that the UMA was attributed mainly from the long-range dipolar interaction between the spins on the surface. Our work opens a new avenue to manipulate the magnetic anisotropy of magnetic structures on the stepped substrate by the decoration of its atomic steps.
