摘要：We present a new method for fabricating magnetic tunnel junction nanopillars that uses polystyrene nanospheres as a lithographic template. Unlike the common approaches, which depend on electron beam lithography to sequentially fabricate each nanopillar, this method is capable of patterning a large number of nanopillars simultaneously. Both random and ordered nanosphere patterns have been explored for fabricating high quality tunneling junctions with magnetoresistance in excess of 100%, employing ferromagnetic layers with both out-of-plane and in-plane easy axis. Novel voltage induced switching has been observed in these structures. This method provides a cost-effective way of rapidly fabricating a large number of tunnel junction nanopillars in parallel.
